Light emitting device package and lighting apparatus including the package

ABSTRACT

Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation Application of prior U.S. patentapplication Ser. No. 15/645,788 filed Jul. 10, 2017, which is aContinuation Application of prior U.S. patent application Ser. No.14/885,427 filed Oct. 16, 2015 (now U.S. Pat. No. 9,735,328 issued Aug.15, 2017), which claims priority under 35 U.S.C. § 119 to KoreanApplication No. 10-2014-0140871, filed in Korea on Oct. 17, 2014, whichis hereby incorporated in its entirety by reference as if fully setforth herein.

BACKGROUND 1. Field

Embodiments relate to a light emitting device package and a lightingapparatus including the package.

2. Background

Light Emitting Diodes (LEDs) are semiconductor devices that convertelectricity into light using characteristics of compound semiconductorsso as to enable transmission/reception of signals, or that are used as alight source. Group III-V nitride semiconductors are highlighted as corematerials of light emitting devices such as, for example, LEDs or LaserDiodes (LDs) due to physical and chemical characteristics thereof.

The LEDs are eco-friendly because they do not include environmentallyharmful materials such as mercury (Hg) used in conventional lightingdevices, e.g., fluorescent lamps and incandescent bulbs. The LEDs alsohave several advantages, e.g., long lifespan and low power consumption.As such, conventional light sources are being rapidly replaced withLEDs. Studies to improve the reliability of conventional light emittingdevice packages including light emitting diodes are being conducted fromvarious approaches.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments will be described in detail with reference to thefollowing drawings in which like reference numerals refer to likeelements wherein:

FIG. 1 is a plan view of a light emitting device package according to anembodiment;

FIG. 2 is a sectional view taken along line I-I′ of the light emittingdevice package illustrated in FIG. 1;

FIG. 3 is a sectional view of one embodiment taken along line II-II′ ofthe light emitting device package illustrated in FIG. 1;

FIG. 4 is an enlarged sectional view of portion CA′ illustrated in FIG.3 according to a comparative embodiment;

FIG. 5 is a sectional view of another embodiment taken along line II-II′of the light emitting device package illustrated in FIG. 1; and

FIGS. 6A to 6D are process plan views illustrating a method formanufacturing the light emitting device package illustrated in FIG. 1.

DETAILED DESCRIPTION

FIG. 1 is a plan view of a light emitting device package 100 accordingto an embodiment, FIG. 2 is a sectional view taken along line I-I′ ofthe light emitting device package 100 illustrated in FIG. 1, and FIG. 3is a sectional view of one embodiment 100A taken along line II-II′ ofthe light emitting device package 100 illustrated in FIG. 1.

Referring to FIGS. 1 and 2, the light emitting device package 100according to the embodiment may include a package body 102, a substrate110, a light emitting structure 120, first and second electrodes (orcontact layers) 132 and 134, first and second pads 142 and 144, firstand second insulation layers 150 and 152, first and second solders 162and 164, first and second lead frames 172 and 174, and a molding member180.

For convenience of description, the package body 102, the secondinsulation layer 152, the first and second solders 162 and 164, thefirst and second lead frames 172 and 174, and the molding member 180,which are illustrated in FIG. 2, are not illustrated in FIG. 1. That is,FIG. 1 illustrates the configuration of a light emitting device.

The package body 102 may define a cavity C. For example, as exemplarilyillustrated in FIG. 2, the package body 102 may define the cavity Calong with the first and second lead frames 172 and 174. The cavity Cmay be defined by an inner side surface 104 of the package body 102 andupper surfaces of the first and second lead frames 172 and 174. However,the embodiment is not limited thereto, and in another embodiment, thecavity C may be defined only by the package body 102, unlike theillustration of FIG. 2.

Alternatively, a barrier wall may be disposed on the flat upper surfaceof the package body 102, and the cavity may be defined by the barrierwall and the upper surface of the package body 102. Although the packagebody 102 may be formed of, for example, an Epoxy Molding Compound (EMC),the embodiment is not limited to the material of the package body 102.

The light emitting structure 120 is disposed under the substrate 110.The substrate 110 may comprise a conductive material or non-conductivematerial. For example, the substrate 110 may comprise at least one ofsapphire (Al₂O₃), GaN, SiC, ZnO, GaP, InP, Ga₂O₃, GaAs, or Si, althoughthe embodiment is not limited to the material of the substrate 110.

In order to improve the difference in the Coefficient of ThermalExpansion (CTE) and the lattice mismatch between the substrate 110 andthe light emitting structure 120, a buffer layer (or a transition layer)may be further disposed between the substrate 110 and light emittingstructure 120. The buffer layer, for example, may comprise at least onematerial selected from the group consisting of Al, In, N, and Ga,without being limited thereto. In addition, the buffer layer may have asingle layer or multi-layer structure.

The light emitting structure 120 may include a first conductivesemiconductor layer 122, an active layer 124, and a second conductivesemiconductor layer 126. The first conductive semiconductor layer 122,the active layer 124, and the second conductive semiconductor layer 126may be stacked one above another in this sequence starting from thesubstrate 110 toward the first and second lead frames 172 and 174 (i.e.in the −y-axis).

The first conductive semiconductor layer 122 is disposed under thesubstrate 110. The first conductive semiconductor layer 122 may beimplemented by, e.g., Group III-V or II-VI compound semiconductors dopedwith a first conductive dopant. When the first conductive semiconductorlayer 122 is an n-type semiconductor layer, the first conductive dopantmay be an n-type dopant and may comprise Si, Ge, Sn, Se, or Te, withoutbeing limited thereto.

For example, the first conductive semiconductor layer 122 may comprise asemiconductor material having a composition of Al_(x)In_(y)Ga_((1-x-y))N(0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 122may comprise any one or more materials selected from among GaN, InN,AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP,InGaP, AlInGaP, and InP.

The active layer 124 may be disposed between the first conductivesemiconductor layer 122 and the second conductive semiconductor layer126. The active layer 124 is a layer in which electrons (or holes)injected through the first conductive semiconductor layer 122 and holes(or electrons) injected through the second conductive semiconductorlayer 126 combine with each other to emit light having energy determinedby an inherent energy band of a constituent material of the active layer124. The active layer 124 may be formed into at least one structureselected from among a single-well structure, a multi-well structure, asingle-quantum well structure, a multi-quantum well structure, a quantumdot structure, and a quantum wire structure.

The active layer 124 may include a well layer and a barrier layer havinga pair structure of any one or more of InGaN/GaN, InGaN/InGaN,GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, and GaP(InGaP)/AlGaP,without being limited thereto. The well layer may be formed of amaterial having lower band gap energy than the band gap energy of thebarrier layer.

A conductive clad layer may be formed above and/or under the activelayer 124. The conductive clad layer may be formed of semiconductorshaving higher band gap energy than the band gap energy of the barrierlayer of the active layer 124. For example, the conductive clad layermay include GaN, AlGaN, InAlGaN, or a super lattice structure. Inaddition, the conductive clad layer may be doped with an n-type orp-type dopant.

In some embodiments, the active layer 124 may emit ultraviolet lighthaving a specific wavelength band. The ultraviolet light wavelength bandmay be within a range from 100 nm to 400 nm. In particular, the activelayer 124 may emit light having a wavelength band within a range from100 nm to 280 nm. However, the embodiment is not limited to thewavelength band of light emitted from the active layer 124.

The second conductive semiconductor layer 126 may be disposed under theactive layer 124. The second conductive semiconductor layer 126 may beformed of a semiconductor compound, and may be formed of, for example,Group III-V or II-VI compound semiconductors. For example, the secondconductive semiconductor layer 126 may comprise a semiconductor materialhaving a composition of In_(x)Al_(y)Ga_(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1).The second conductive semiconductor layer 126 may be doped with a secondconductive dopant. When the second conductive semiconductor layer 126 isa p-type semiconductor layer, the second conductive dopant may be ap-type dopant and may include, for example, at least one of Mg, Zn, Ca,Sr, or Ba.

The first conductive semiconductor layer 122 may be an n-typesemiconductor layer, and the second conductive semiconductor layer 126may be a p-type semiconductor layer. Alternatively, the first conductivesemiconductor layer 122 may be a p-type semiconductor layer, and thesecond conductive semiconductor layer 126 may be an n-type semiconductorlayer.

The light emitting structure 120 may be implemented in any one structureselected from among an n-p junction structure, a p-n junction structure,an n-p-n junction structure, and a p-n-p junction structure.

The first electrodes 132 may be electrically connected to the firstconductive semiconductor layer 122 which is exposed by mesa-etching. Asthe second conductive semiconductor layer 126, the active layer 124, anda portion of the first conductive semiconductor layer 122 aremesa-etched, first through-holes are formed so as to penetrate thesecond conductive semiconductor layer 126 and the active layer 124. Atthis time, the first electrodes 132 are formed above the firstconductive semiconductor layer 122, which is exposed through thosefirst-first through-holes TH11 of the first through-holes. Thefirst-first through-holes TH11 correspond to those first through-holes,through which the first pad 142 is electrically connected to the firstelectrodes 132. As exemplarily illustrated in FIG. 1, the firstelectrodes 132 may have a strip shape when in plan view, so as to beelongated in the z-axis.

To assist understanding, the first electrodes 132, which are coveredwith the first insulation layer 150 as exemplarily illustrated in FIG.3, are designated by the dotted line in FIG. 1, and the first-firstthrough-holes TH11, which are covered with the first pad 142 asexemplarily illustrated in FIG. 2, are designated by the dotted line inFIG. 1. In addition, as exemplarily illustrated in FIG. 2, in eachfirst-first through-hole TH11, although the first electrode 132 isdisposed under the exposed first conductive semiconductor layer 122 andthe width of the first-first through-hole TH11 in the Z′-axis is greaterthan the width of the first electrode 132 in the Z′-axis, forconvenience of description, the first-first through-hole TH11 and thefirst electrode 132 are illustrated in FIG. 1 as being the same width aseach other. However, the plan shapes of the first-first through-holeTH11 and the first electrode 132 will be described below in detail withreference to FIGS. 6A and 6B.

In addition, although FIG. 1 illustrates that the number of thefirst-first through-holes TH11 is 6, the embodiment is not limitedthereto. The number of the first-first through-holes TH11 may be greateror less than 6. The first electrodes 132 may comprise an ohmic contactmaterial, and serve as an ohmic layer. Thus, a separate ohmic layer (notillustrated) may be unnecessary, or a separate ohmic layer may bedisposed above or under the first electrodes 132.

The second electrode 134 may be disposed under the second conductivesemiconductor layer 126 so as to be electrically connected to the secondconductive semiconductor layer 126. The second electrode 134 may includea transparent electrode and a reflective layer.

The reflective layer may be formed of a reflective material such assilver (Ag). The transparent electrode may be disposed between thereflective layer and the second conductive semiconductor layer 126, andthe reflective layer may be disposed under the transparent electrode.The transparent electrode may be a Transparent Conductive Oxide (TCO)film. For example, the transparent electrode may comprise at least oneof Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Zinc TinOxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium ZincOxide (IGZO), Indium Gallium Tin Oxide (IGTO), Aluminum Zinc Oxide(AZO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IrOx, RuOx,RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, and is not limited to thesematerials.

The second electrode 134 may have ohmic characteristics, and maycomprise a material for ohmic contact with the second conductivesemiconductor layer 126. When the second electrode 134 serves as anohmic layer, a separate ohmic layer (not illustrated) may be omitted.

As described above, when the second electrode 134 includes thereflective layer, light, emitted from the active layer 124 and directedto the first and second lead frames 172 and 174, is reflected by thereflective layer of the second electrode 134, which may improve lightextraction efficiency.

The light emitting device packages 100 and 100A, illustrated in FIGS. 1to 3, have a flip-chip bonding structure, and therefore, light emittedfrom the active layer 124 may be directed through the first electrode132, the first conductive semiconductor layer 122, and the substrate110. To this end, the first electrodes 132, the first conductivesemiconductor layer 122, and the substrate 110 may be formed of atransmissive material. At this time, although the second conductivesemiconductor layer 126 and the second electrode 134 may be formed of atransmissive or non-transmissive material or a reflective material, theembodiment may not be limited to a specific material.

Each of the first and second electrodes 132 and 134 may reflect ortransmit light emitted from the active layer 124, rather than absorbingthe light, and may be formed of any material that is capable of growingin good quality on the first and second conductive semiconductor layers122 and 126. For example, each of the first and second electrodes 132and 134 may be formed of a metal, and may be formed of Ag, Ni, Al, Rh,Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and selective combinations thereof.

Meanwhile, the first pad 142 may be connected to the first electrodes132 through the first-first through-holes TH11. At this time, the firstinsulation layer 150 may be disposed between the first pad 142 and thesecond conductive semiconductor layer 126 so that the two 142 and 126are electrically spaced apart from each other. In addition, the firstinsulation layer 150 may be disposed between the first pad 142 and theactive layer 124 so that the two 142 and 124 are electrically spacedapart from each other.

The second pad 144 may be electrically spaced apart from the first pad142, and may be connected to the second electrode 134 via secondthrough-holes TH2, which penetrate the first insulation layer 150disposed under the second conductive semiconductor layer 126.

Referring to FIG. 1, when viewed in plan, the second through-holes TH2may be located between the first electrodes 132 in the direction (i.e.in the x-axis), which is perpendicular to the longitudinal direction ofthe first electrodes 132 (i.e. in the z-axis) (or in the direction inwhich the first pad 142 and the second pad 144 are spaced apart fromeach other). In the case of FIG. 1, although the major axis of thesecond through-hole TH2 is illustrated as being the x-axis and the minoraxis of the second through-hole TH2 is illustrated as being the z-axis,the embodiment is not limited thereto. That is, in another embodiment,the minor axis of the second through-hole TH2 may be the x-axis and themajor axis of the second through-hole TH2 may be the z-axis.

As exemplarily illustrated in FIG. 1, the second pad 144 may be formedin a unitary body, rather than being divided into several portions. Inanother embodiment, unlike the illustration of FIG. 2, the second pad144 may be connected to the second electrode 134 without penetrating thefirst insulation layer 150. Each of the first and second pads 142 and144 may comprises an electrically conductive metal material, and maycomprise the same material as or a different material from each of thefirst and second electrodes 132 and 134.

Referring to FIG. 3, as described above, as the second conductivesemiconductor layer 126, the active layer 124, and a portion of thefirst conductive semiconductor layer 122 are mesa-etched, firstthrough-holes are formed so as to penetrate the second conductivesemiconductor layer 126 and the active layer 124. The first insulationlayer 150 may be disposed to cover the first electrodes 132 infirst-second through-holes TH12 among the first through-holes. Thefirst-second through-holes TH12 correspond to those first through-holes,through which the first electrodes 132 are not electrically connected tothe first pad 142.

As exemplarily illustrated in FIG. 3, although the first electrodes 132are disposed under the exposed first conductive semiconductor layer 122and the width of the first-second through-holes TH12 in the x-axis isgreater than the width of the first electrodes 132 in the x-axis, forconvenience of description, the first-second through-holes TH12 and thefirst electrodes 132 are illustrated in FIG. 1 as being the same widthas each other. The plan shapes of the first-second through-holes TH12and the first electrodes 132 will be described below in detail withreference to FIGS. 6A and 6B.

At this time, in the embodiment, as exemplarily illustrated in FIG. 3,the second pad 144 may be disposed so as not to overlap the firstinsulation layer 150 located in the first-second through-holes TH12 inthe y-axis (i.e. in the thickness direction of the light emittingstructure 120). That is, the second pad 144 may be located near thefirst-second through-holes TH12, rather than being embedded in thefirst-second through-holes TH12.

When the second pad 144 is embedded in the first-second through-holesTH12 unlike the illustration of FIG. 3, a lower surface 144A of thesecond pad 144 may have a curved cross-sectional shape, rather thanbeing flat. This is because the first insulation layer 150, located inthe first-second through-holes TH12, has a curved cross-sectional shape.However, according to the embodiment, the lower surface 144A of thesecond pad 144 may have a flat cross-sectional shape because the secondpad 144 is not embedded in the first-second through-holes TH12. Here,the lower surface 144A of the second pad 144 means an opposite surfaceof an upper surface 144B facing the substrate 110.

Referring to FIGS. 1 and 3, the second pad 144 may include one or moreslits S formed in the longitudinal direction of the first electrodes 132(i.e. in the z-axis) at positions near the first-second through-holesTH12. In the case of the light emitting device packages 100 and 100Aillustrated in FIGS. 1 and 3, although three slits S are illustrated,the embodiment is not limited to the number of the slits S. That is, thenumber of the slits S may be greater or less than 3.

When the light emitting device package 100 has a large planar size (i.e.the product of a long x-axis length and z-axis length), for example,when the light emitting device package 100 has a size of 800 μm×800 μm,the first electrodes 132 may take the form of a plurality of strips, inorder to ensure smooth carrier spreading. In addition, the number of thestrip-shaped first electrodes 132 may be the same as or different fromthe number of the slits S of the second pad 144.

In addition, referring to FIG. 1, a first width W1 of the at least oneslit S may be equal to or greater than a second width W2 of the firstelectrodes 132 (or the first-second through-holes TH12).

In addition, when viewed in plan, the second pad 144 may be spaced apartfrom the first electrodes 132 with a gap G therebetween. Here, the gap Gmay include a first gap G1 and a second gap G2. The first gap G1 isdefined in the longitudinal direction of the first electrodes 132 (i.e.in the z-axis), and represents the separation distance in the x-axisbetween the second pad 144 and the first electrodes 132. The second gapG2 is defined in the width (W2) direction of the first electrodes 132(i.e. in the x-axis), and represents the separation distance in thez-axis between the second pad 144 and the first electrodes 132.

When each of the first and second gaps G1 and G2 is below 5 μm, themanufacturing process may be difficult, and stress may be applied to thefirst insulation layer 150 disposed under the first electrodes 132. Inaddition, when each of the first and second gaps G1 and G2 is above 20μm, the contact area between the first electrodes 132 and the firstconductive semiconductor layer 122 is reduced, which may deteriorateheat radiation and increase resistance. Accordingly, although each ofthe first and second gaps G1 and G2 may be within a range from 5 μm to20 μm, the embodiment is not limited thereto.

FIG. 4 is an enlarged sectional view of portion ‘A’ illustrated in FIG.3 according to a comparative embodiment A1. Unlike the embodimentillustrated in FIG. 3, in the case of the comparative embodimentillustrated in FIG. 4, the first insulation layer 150 covering the firstelectrodes 132 and the second pad 144 overlap each other in the y-axiswithin the first-second through-holes TH12. Here, the second pad 44 ofthe comparative embodiment performs the same role as the second pad 144of the embodiment, excluding the difference in position compared to thesecond pad 144. In this case, when a crack C is generated in the firstinsulation layer 150, the second pad 44 and the first electrodes 132 maybe electrically connected to each other through the crack C, which maycause a short-circuit.

However, according to the embodiment, as exemplarily illustrated in FIG.3, the first insulation layer 150 and the second pad 144 do not overlapeach other in the y-axis within the first-second through-holes TH12.Thus, even if the crack C is present in the first insulation layer 150as exemplarily illustrated in FIG. 4, the risk of the second pad 144 andthe first electrodes 132 being electrically connected to each other maybe completely eliminated.

Generally, a lower surface 122A of the first conductive semiconductorlayer 122, which are exposed by mesa-etching, and a lower surface 132Aof the first electrode 132 are stepped. Thus, a crack C may be generatedin the first insulation layer 150 due to the stepped shape describedabove during the process of forming the first insulation layer 150 inthe first-second through-holes TH12. For this reason, in the embodiment,the second pad 144 is not formed in the first-second through-holes TH12as described above, which may eliminate the risk of the second pad 144and the first electrodes 132 being electrically connected to each other,resulting in improved reliability.

FIG. 5 is a sectional view of another embodiment 100B taken along lineII-II′ of the light emitting device package 100 illustrated in FIG. 1.Meanwhile, the first and second solders 162 and 164 of the lightemitting device package 100 illustrated in FIG. 2 may be electricallyconnected to the first and second pads 142 and 144 respectively.

In one embodiment, as exemplarily illustrated in FIG. 3, a second solder164A may be located below the second pad 144, rather than being embeddedin the first-second through-hole TH12. In another embodiment, the secondsolder 164 may be embedded in at least a portion of the first-secondthrough-hole TH12. For example, as exemplarily illustrated in FIG. 5, asecond solder 164B may be embedded in the entire first-secondthrough-hole TH12 and may also be located between the light emittingstructure 120 and the second lead frame 174 and between the second pad144 and the second lead frame 174.

At this time, in the case of FIG. 5, the second solder 164B isillustrated as being electrically spaced apart from the first electrodes132 by the first insulation layer 150. At this time, as exemplarilyillustrated in FIG. 4, even if a crack C is present in the firstinsulation layer 150 within the first-second through-hole TH12, noshort-circuit may occur between the second solder 164B and the firstelectrodes 132. This is because the second solder 164B does not causestress unlike the second pad 144.

As described above, except for the arrangement shapes of the secondsolders 164A and 164B, the light emitting device package 100Billustrated in FIG. 5 is the same as the light emitting device package100A illustrated in FIG. 3, and thus is designated by the same referencenumerals and a repeated description thereof is omitted.

In the light emitting device packages 100, 100A and 1006, the firstsolder 162 may be electrically connected to the first lead frame 172 andthe second solder 164; 164A; or 164B may be electrically connected tothe second lead frame 174. That is, the first solder 162 may be locatedbetween the first lead frame 172 and the first pad 142 so as toelectrically connect the two 172 and 142 to each other, and the secondsolder 164; 164A; or 164B may be located between the second lead frame174 and the second pad 144 so as to electrically connect the two 174 and144 to each other. The first solder 162 and the second solder 164; 164A;or 164B may respectively be solder paste or solder balls.

Referring to FIG. 2, the first and second lead frames 172 and 174 may bespaced apart from each other in the direction (e.g., in the Z′-axis),which is perpendicular to the thickness direction of the light emittingstructure 120 (i.e. in the y′-axis). Each of the first and second leadframes 172 and 174 may be formed of a conductive material, for example,a metal, and the embodiment is not limited to the kinds of materials ofthe respective first and second lead frames 172 and 174. In order toelectrically isolate the first and second lead frames 172 and 174 fromeach other, the second insulation layer 152 may be disposed between thefirst and second lead frames 172 and 174.

In addition, when the package body 102 is formed of a conductivematerial, for example, a metal, the first and second lead frames 172 and174 may constitute a portion of the package body 102. Even in this case,the first and second lead frames 172 and 174 of the package body 102 maybe electrically isolated from each other by the second insulation layer152.

Although each of the first and second insulation layers 150 and 152 maycomprise at least one of SiO₂, TiO₂, ZrO₂, Si₃N₄, Al₂O₃, or MgF₂, theembodiment is not limited to the material of the first and secondinsulation layers 150 and 152.

The first and second solders 162 and 164 described above may eliminatethe necessity of wires by electrically connecting the first and secondconductive semiconductor layers 122 and 126 to the first and second leadframes 172 and 174 respectively via the first and second pads 142 and144. However, according to another embodiment, the first and secondconductive semiconductor layers 122 and 126 may be connectedrespectively to the first and second lead frames 172 and 174 usingwires.

In addition, the first solder 162 and the second solder 164; 164A; or164B may be omitted. In this case, the first pad 142 may serve as thefirst solder 162, and the second pad 144 may serve as the second solder164; 164A; or 164B. When the first solder 162 and the second solder 164;164A; or 164B are omitted, the first pad 142 may be directly connectedto the first lead frame 172 and the second pad 144 may be directlyconnected to the second lead frame 174.

Meanwhile, the molding member 180 may enclose and protect the lightemitting device 110, 120, 132, 134, 142, 144, and 150, the first solder162, and the second solder 164; 164A; or 164B. The molding member 180may be formed of, for example, silicon (Si) and contain phosphors, thusbeing capable of changing (or, converting) the wavelength of lightemitted from the light emitting device. Although the phosphors mayinclude phosphors selected from among YAG-based, TAG-based,silicate-based, sulfide-based, or nitride-based wavelength changematerials which may change light generated from the light emittingdevice 100 into white light, the embodiment is not limited to the kindsof phosphors.

The YGA-based and TAG-based phosphors may be selected from among (Y, Tb,Lu, Sc, La, Gd, Sm)3(Al, Ga, In, Si, Fe)5(O, S)12:Ce, and thesilicate-based phosphors may be selected from among (Sr, Ba, Ca,Mg)2SiO4:(Eu, F, Cl).

In addition, the sulfide-based phosphors may be selected from among (Ca,Sr)S:Eu, (Sr, Ca, Ba)(Al, Ga)2S4:Eu, and the nitride-based phosphors maybe selected from among (Sr, Ca, Si, Al, O)N:Eu (e.g., CaAlSiN4:Euβ-SiAlON:Eu) or Ca-α SiAlON:Eu-based (Cax, My)(Si, Al)12(O, N)16 (here,M is at least one of Eu, Tb, Yb or Er, 0.05<(x+y)<0.3, 0.02<x<0.27, and0.03<y<0.3, which is phosphors).

Red phosphors may be nitride-based phosphors including N(e.g.,CaAlSiN3:Eu). The nitride-based red phosphors have higher reliability inresistance to external environments such as, for example, heat andmoisture and lower discoloration risk than sulfide-based phosphors.

Hereinafter, a method for manufacturing the light emitting devicepackage 100 illustrated in FIG. 1 will be described with reference toFIGS. 6A to 6D. However, of course, the embodiment is not limitedthereto, and the light emitting device package 100 illustrated in FIG. 1may be manufactured using any of various other methods.

FIGS. 6A to 6D are process plan views illustrating a method formanufacturing the light emitting device package 100 illustrated in FIG.1.

Referring to FIG. 6A, the light emitting structure 120 is formed on thesubstrate 110. Here, the first conductive semiconductor layer 122, theactive layer 124, and the second conductive semiconductor layer 126 maybe formed in sequence on the substrate 110 as exemplarily illustrated inFIGS. 2, 3, and 5. When the light emitting structure 120 is formed asdescribed above, as exemplarily illustrated in FIG. 6A, only theuppermost second conductive semiconductor layer 126 is visible in theplan view of the light emitting device package 100.

Subsequently, the first-first through-holes TH11 and the first-secondthrough-holes TH12, through which the first conductive semiconductorlayer 122 is exposed, are formed by removing the second conductivesemiconductor layer 126, the active layer 124, and a portion of thefirst conductive semiconductor layer 122 via mesa etching.

Subsequently, referring to FIG. 6B, the second electrode 134 is formedon the second conductive semiconductor layer 126, and the firstelectrodes 132 are formed on the first conductive semiconductor layer122 exposed through the first-first through-holes TH11 and thefirst-second through-holes TH12.

Subsequently, referring to FIG. 6C, the first insulation layer 150 isformed on the entire light emitting device package 100 excluding boththe first electrodes 132 located in the first-first through-holes TH11and the second electrode 134 exposed through the second through-holesTH2.

Subsequently, referring to FIG. 6D, the first pad 142 and the second pad144 are formed on the first insulation layer 150. At this time, thefirst pad 142 may be located to overlap the first electrodes 132 in they-axis (i.e. in the thickness direction of the light emitting structure120) formed on the first conductive semiconductor layer 122 exposedthrough the first-first through-holes TH11. In addition, the second pad144 may be located to overlap the second electrode 134 exposed throughthe second through-holes TH2 in the y-axis.

The light emitting device package 100 illustrated in FIG. 1 is notlimited to the cross-sectional shape illustrated in FIG. 2 and may haveany of various other cross-sectional shapes. That is, so long as thesecond pad 144 does not overlap the first-second through-hole TH12 inthe thickness direction of the light emitting structure 120 asillustrated in FIG. 1, the light emitting device package 100 illustratedin FIG. 1 may have any of various other cross-sectional shapes.

In addition, in the case of FIG. 1, although each of the first andsecond pads 142 and 144 is illustrated as having a rectangular shape inplan view, the embodiment is not limited thereto. For example, inanother embodiment, each of the first and second pads 142 and 144 mayhave any of various polygonal planar shapes such as an elliptical,triangular, or pentagonal planar shape.

In the light emitting device package according to the embodiment, anarray of a plurality of light emitting device packages may be disposedon a board, and optical members such as, for example, a light guideplate, a prism sheet, and a diffuser sheet may be disposed in an opticalpath of the light emitting device packages. The light emitting devicepackages, the board, and the optical members may function as a backlightunit.

In addition, the light emitting device package according to theembodiment may be applied to a display apparatus, an indicatorapparatus, and a lighting apparatus.

Here, the display apparatus may include a bottom cover, a reflectiveplate disposed on the bottom cover, a light emitting module configuredto emit light, a light guide plate disposed in front of the reflectiveplate to forwardly guide light emitted from the light emitting module,optical sheets including prism sheets disposed in front of the lightguide plate, a display panel disposed in front of the optical sheets, animage signal output circuit connected to the display panel to supply animage signal to the display panel, and a color filter disposed in frontof the display panel. Here, the bottom cover, the reflective plate, thelight emitting module, the light guide plate, and the optical sheets mayconstitute a backlight unit.

In addition, the lighting apparatus may include a light source modulewhich includes a board and the light emitting device package accordingto the embodiment, a radiator configured to radiate heat of the lightsource module, and a power supply unit configured to process or convertan electrical signal from an external source so as to supply the same tothe light source module. For example, the lighting apparatus may includea lamp, a headlamp, or a streetlight.

The headlamp may include a light emitting module which includes thelight emitting device packages arranged on a board, a reflectorconfigured to reflect light, emitted from the light source module, in agiven direction, for example, forwardly, a lens configured to forwardlyrefract light reflected by the reflector, and a shade configured toachieve a light distribution pattern selected by a designer by blockingor reflecting some of light, reflected by the reflector and directed tothe lens.

As is apparent from the above description, in a light emitting devicepackage according to the embodiment, a first insulation layer and asecond pad do not overlap each other in the thickness direction of alight emitting structure within a first-second through-hole formed bypassing-through a second conductive semiconductor layer and an activelayer. Therefore, even if a crack is present in the first insulationlayer, the risk of the second pad being electrically connected to afirst electrode may be completely eliminated, which results in improvedreliability.

Embodiments provide a light emitting device package having improvedreliability and a lighting apparatus including the package.

In one embodiment, a light emitting device may include a substrate, alight emitting structure disposed under the substrate, the lightemitting structure including a first conductive semiconductor layer, anactive layer, and a second conductive semiconductor layer, first andsecond electrodes connected respectively to the first and secondconductive semiconductor layers, a first pad connected to a plurality ofthe first electrodes in a plurality of first-first through-holes, thefirst-first through-holes being a portion of a first through-holepenetrating the second conductive semiconductor layer and the activelayer so as to expose the first conductive semiconductor layer, a firstinsulation layer disposed between the first pad and the secondconductive semiconductor layer and between the first pad and the activelayer, so as to cover the first electrodes in a first-secondthrough-hole, the first-second through-hole being remaining portion ofthe first through-hole, and a second pad connected to the secondelectrode through a second through-hole penetrating the first insulationlayer disposed under the second conductive semiconductor layer, thesecond pad being electrically spaced apart from the first pad, whereinthe second pad is located so as not to overlap the first insulationlayer located in the first-second through-holes in a thickness directionof the light emitting structure. The second pad may be located near thefirst-second through-holes, rather than being embedded in thefirst-second through-holes. Each of the first and second pads may havean elliptical or polygonal shape in plan view.

For example, the first electrodes may have a strip shape in plan view.The second pad may include at least one slit formed in a longitudinaldirection of the first electrodes at positions near the first-secondthrough-holes. The at least one slit may have a width equal to orgreater than a width of the first electrodes. The number of thestrip-shaped first electrodes may be the same as the number of the atleast one slit.

For example, the light emitting device package may further include firstand second solders connected respectively to the first and second pads,and first and second lead frames connected respectively to the first andsecond solders. The second solder may be embedded in at least a portionof the first-second through-holes. The second solder may be locatedunder the second pad, rather than being embedded in the first-secondthrough-holes. The second solder may be electrically spaced apart fromthe first electrodes by the first insulation layer.

For example, the second through-hole may be located between therespective first electrodes in a direction perpendicular to alongitudinal direction of the first electrodes when viewed in plan.

For example, the first conductive semiconductor layer may be an n-typesemiconductor layer, and the second conductive semiconductor layer maybe a p-type semiconductor layer.

For example, the second pad may be spaced apart from the firstelectrodes by a gap in a plane, and the gap may include a first gapformed in a longitudinal direction of the first electrodes and a secondgap formed in a width direction of the first electrodes. For example,each of the first and second gaps may be within a range from 5 μm to 20μm. The second pad may have a flat lower surface. For example, thesecond pad may include an upper surface facing the substrate, and alower surface opposite to the upper surface, the lower surface having aflat cross-sectional shape.

For example, the second electrode may include a reflective layer. Thefirst conductive semiconductor layer and the first electrodes may havestepped lower surfaces.

It will be understood that, when each element is referred to as beingformed “on” or “under” the other element, it can be directly “on” or“under” the other element or be indirectly formed with one or moreintervening elements therebetween. In addition, it will also beunderstood that “on” or “under” the element may mean an upward directionand a downward direction of the element.

In addition, the relative terms “first”, “second”, “top/upper/above”,“bottom/lower/under” and the like in the description and in the claimsmay be used to distinguish between any one substance or element andother substances or elements and not necessarily for describing anyphysical or logical relationship between the substances or elements or aparticular order.

Although the light emitting device package 100 according to theembodiment will be described using the Cartesian coordinate system, ofcourse, it may alternatively be described using other coordinatesystems. In the Cartesian coordinate system, the x-axis, the y-axis, andthe z-axis illustrated in each drawing are perpendicular to one another,and the x′-axis, the y′-axis, and the z′-axis are perpendicular to oneanother.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device package, comprising: asubstrate; a light emitting structure disposed under the substrate, thelight emitting structure including a first conductive semiconductorlayer, an active layer, and a second conductive semiconductor layer; aplurality of first through-holes penetrating the second conductivesemiconductor layer and the active layer to expose the first conductivesemiconductor layer; a first electrode disposed in the plurality offirst through-holes to be connected to the first conductivesemiconductor layer; a second electrode connected to the secondconductive semiconductor layer; a first pad connected to the firstelectrode in a plurality of first portions of the first through-holes;an insulation layer disposed between the first pad and the secondconductive semiconductor layer; and a second pad connected to the secondelectrode through a second through-hole penetrating the insulationlayer, the second pad being configured to be electrically spaced apartfrom the first pad, wherein the second pad has a planar comb shapecomprising a plurality of slits formed at one side of the second pad,wherein the first electrode comprises; a first portion contacting thefirst conductive semiconductor layer and vertically overlapping thefirst pad; and a second portion connected to the first portion, whilenot vertically overlapping the first pad and the second pad, andarranged at one of the plurality of slits, wherein the second pad isspaced apart from the second portion of the first electrode by a gap ina plane, the gap including; a first distance formed in a first directioncorresponding to a width direction of the one of the plurality of slits;and a second distance formed in a second direction perpendicular to thefirst direction, wherein the insulation layer covers the firstelectrodes in a second portion of the first through-holes, and whereinthe second pad does not overlap the insulation layer located in thesecond portions of the first through-holes in a thickness direction ofthe light emitting structure.
 2. The package according to claim 1,wherein the first pad includes a first cavity.
 3. The package accordingto claim 2, further comprising: a first solder connected to the firstpad; and a second solder connected to the second pad.
 4. The packageaccording to claim 3, wherein the first solder is embedded in the firstcavity of the first pad.
 5. The package according to claim 1, whereinthe first conductive semiconductor layer is an n-type semiconductorlayer, and wherein the second conductive semiconductor layer is a p-typesemiconductor layer.
 6. The package according to claim 1, wherein thefirst portion of the first electrode is surrounded by the secondelectrode.
 7. The package according to claim 1, wherein the secondportion of the first electrode includes a plurality of second portions,and wherein the second through-hole is located between the secondportions of the first electrode.
 8. The package according to claim 1,wherein each of the slits has a width equal to or greater than a widthof the second portion of the first electrode.
 9. The package accordingto claim 1, wherein the second pad has a flat lower surface.
 10. Thepackage according to claim 1, wherein the second electrode includes areflective layer.
 11. The package according to claim 1, wherein thesecond pad is located near the second portion of the first electrode.12. The package according to claim 1, further comprising: a bodycomprising a second cavity; and a molding member disposed between thebody and the substrate.
 13. The package according to claim 1, furthercomprising a phosphor disposed on the substrate.
 14. The packageaccording to claim 1, wherein the number of the first through-holes isgreater than the number of the second through-holes.
 15. The packageaccording to claim 1, wherein a width of each of the slits is greaterthan a width of the second portion of the first electrode.
 16. Thepackage according to claim 1, wherein the number of the firstthrough-holes is greater than the number of the second through-holes.17. The package according to claim 1, wherein the first conductivesemiconductor layer has stepped lower surfaces.
 18. The packageaccording to claim 1, further comprising: a first lead frame connectedto the first solder; and a second lead frame connected to the secondsolder.
 19. The package according to claim 1, wherein the firstelectrode has a strip shape in plan view.
 20. A lighting apparatusincluding the light emitting device package according to claim 1.